Tubidy
    YESvGaN - Wide Band Gap Power at Silicon Cost

    YESvGaN - Wide Band Gap Power at Silicon Cost

    05:09 |
    Download MP3

    Related Videos

    YESvGaN - Wide Band Gap Power at Silicon Cost 5:10

    YESvGaN - Wide Band Gap Power at Silicon Cost

    GaN industrialization: From lateral to vertical - Christian Huber (Bosch) 1:32:01

    GaN industrialization: From lateral to vertical - Christian Huber (Bosch)

    Wide band gap power transistors for electrified mobility - Klaus Heyers (Bosch) 40:49

    Wide band gap power transistors for electrified mobility - Klaus Heyers (Bosch)

    Power transistor manufacturing flow - Salvatore Coffa (STMicroelectronics) 47:41

    Power transistor manufacturing flow - Salvatore Coffa (STMicroelectronics)

    Young researchers of Materials Center Leoben Forschung Gmbh (MCL) say YESvGaN! 1:43

    Young researchers of Materials Center Leoben Forschung Gmbh (MCL) say YESvGaN!

    Vertical GaN on foreign substrates: The YESvGaN approach - Christian Huber (Bosch) 43:02

    Vertical GaN on foreign substrates: The YESvGaN approach - Christian Huber (Bosch)

    Epitaxial growth of GaN and SiC - Bernd Schineller (AIXTRON SE) 1:16:41

    Epitaxial growth of GaN and SiC - Bernd Schineller (AIXTRON SE)

    Reliability and stability of GaN devices - Nicolò Zagni (IUNET-UNIMORE) 55:07

    Reliability and stability of GaN devices - Nicolò Zagni (IUNET-UNIMORE)

    The status and challenges of making GaN crystals and wafers - Elke Meissner (Fraunhofer IISB) 48:41

    The status and challenges of making GaN crystals and wafers - Elke Meissner (Fraunhofer IISB)

    GaN Epitaxy: Novel Aspects and Perspectives - Bernd Schniller (AIXTRON) 1:21:08

    GaN Epitaxy: Novel Aspects and Perspectives - Bernd Schniller (AIXTRON)

    Soitec SmartCut for SiC engineering substrate: SmartSiC(TM) - Walter Schwarzenbach (Soitec) 32:48

    Soitec SmartCut for SiC engineering substrate: SmartSiC(TM) - Walter Schwarzenbach (Soitec)

    Industrialization, standardization and packaging - Martin Rittner (Bosch) 1:08:53

    Industrialization, standardization and packaging - Martin Rittner (Bosch)

    GaN High Electron Mobility Transistors for power switching applications - Farid Medjdoub (CNRS-IEMN) 1:24:49

    GaN High Electron Mobility Transistors for power switching applications - Farid Medjdoub (CNRS-IEMN)

    GaN high electron mobility transistors for power switching applications - Farid Medjdoub (CNRS) 1:02:39

    GaN high electron mobility transistors for power switching applications - Farid Medjdoub (CNRS)

    Structural and Electrical Characterization of Nitrides for Electronic Devices - Elke Meissner (IISB) 1:43:05

    Structural and Electrical Characterization of Nitrides for Electronic Devices - Elke Meissner (IISB)

    SiC and GaN for power electronics: 2 markets driven by different growth engines - Taha Ayari (Yole) 1:13:57

    SiC and GaN for power electronics: 2 markets driven by different growth engines - Taha Ayari (Yole)

    GaN HEMT modelling: a tutorial - Giovanni Verzellesi (University of Modena and Reggio Emilia) 1:20:46

    GaN HEMT modelling: a tutorial - Giovanni Verzellesi (University of Modena and Reggio Emilia)

    Reliability and stability of SiC devices: New dynamic robustness tests - Tobias Reimann (ISLE) 30:02

    Reliability and stability of SiC devices: New dynamic robustness tests - Tobias Reimann (ISLE)

    Wide band gap power semiconductor device fabrication 2:37

    Wide band gap power semiconductor device fabrication

    March 6, 2024 0:17

    March 6, 2024